EFFECT OF ENERGY-BAND STRUCTURES ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS

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dc.citation.epage4762en_US
dc.citation.issue10en_US
dc.citation.spage4757en_US
dc.citation.volume21en_US
dc.citation.woscount4en_US
dc.contributor.authorWU, CCen_US
dc.contributor.authorCHEN, Aen_US
dc.contributor.department應用數學系zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.date.accessioned2019-04-03T06:41:45Z
dc.date.available2019-04-03T06:41:45Z
dc.date.issued1980-01-01en_US
dc.identifier.doi10.1103/PhysRevB.21.4757en_US
dc.identifier.issn0163-1829en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.21.4757en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5055
dc.identifier.wosnumberWOS:A1980JW35700058en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF ENERGY-BAND STRUCTURES ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC-FIELDSen_US
dc.typeArticleen_US

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