OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE
| dc.citation.epage | 2715 | en_US |
| dc.citation.issue | 21 | en_US |
| dc.citation.spage | 2713 | en_US |
| dc.citation.volume | 62 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | CHEN, YF | en_US |
| dc.contributor.author | DAI, YT | en_US |
| dc.contributor.author | CHOU, HP | en_US |
| dc.contributor.author | CHANG, DC | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | WANG, PJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:31Z | |
| dc.date.available | 2014-12-08T15:04:31Z | |
| dc.date.issued | 1993-05-24 | en_US |
| dc.description.abstract | We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation. | en_US |
| dc.identifier.doi | 10.1063/1.109241 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.109241 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3012 | |
| dc.identifier.wosnumber | WOS:A1993LD12300040 | |
| dc.language.iso | en_US | en_US |
| dc.title | OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE | en_US |
| dc.type | Article | en_US |
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