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High-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr)

dc.citation.epageen_US
dc.citation.issueen_US
dc.citation.volume8en_US
dc.citation.woscount2
dc.contributor.authorChen, J. M.en_US
dc.contributor.authorLiu, R. S.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorT Lu, K.en_US
dc.contributor.authorYang, T. J.en_US
dc.contributor.authorKramer, M. J.en_US
dc.contributor.authorMcCallum, R. W.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:15:43Z
dc.date.available2014-12-08T15:15:43Z
dc.date.issued2006-09-27en_US
dc.description.abstractWe have probed the distribution of hole carriers in Eu(Ba1-xEux)(2) Cu3O7+delta (x = 0 - 0.2) and Eu(Ba1-xPrx)(2)Cu3O7+delta (x = 0 - 0.25) by O K-edge and Cu L-edge x-ray absorption spectra. Upon Eu and Pr substitution at the Ba site in Eu(Ba1-xRx)(2)Cu3O7+delta, the concentration of holes in the CuO2 planes becomes greatly diminished. The depletion rate of hole carriers within the CuO2 planes in Eu(Ba1-xPrx)(2)Cu3O7+delta is greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta. The rate of T-c suppression with Pr doping in Eu(Ba1-xPrx)(2)Cu3O7+delta is accordingly greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta.en_US
dc.identifier.doi10.1088/1367-2630/8/9/215en_US
dc.identifier.issn1367-2630en_US
dc.identifier.journalNEW JOURNAL OF PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/1367-2630/8/9/215en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11755
dc.identifier.wosnumberWOS:000240807500005
dc.language.isoen_USen_US
dc.titleHigh-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr)en_US
dc.typeArticleen_US

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