深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II)
| dc.contributor.author | 陳明哲 | en_US |
| dc.contributor.author | CHEN MING-JER | en_US |
| dc.contributor.department | 交通大學電子工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:29:40Z | |
| dc.date.available | 2014-12-13T10:29:40Z | |
| dc.date.issued | 2000 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC89-2215-E009-049 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542092&docId=99579 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/89508 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 穿隧漏電流 | zh_TW |
| dc.subject | 快閃式記憶體 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 靜電放電 | zh_TW |
| dc.subject | 鎖定 | zh_TW |
| dc.subject | 超大型積體電路 | zh_TW |
| dc.subject | Tunneling leakage | en_US |
| dc.subject | Flash memory | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | ESD | en_US |
| dc.subject | Latch-up | en_US |
| dc.subject | VLSI | en_US |
| dc.title | 深次微米MOSFET穿隧漏電流、鎖定及靜電放電之研究(II) | zh_TW |
| dc.title | Tunneling Leakage, Latch-up, and ESD in Deep Submicron MOSFET's (II) | en_US |
| dc.type | Plan | en_US |