Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
| dc.citation.epage | 682 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 680 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 22 | |
| dc.contributor.author | Su, Nai-Chao | en_US |
| dc.contributor.author | Wang, Shui-Jinn | en_US |
| dc.contributor.author | Huang, Chin-Chuan | en_US |
| dc.contributor.author | Chen, Yu-Han | en_US |
| dc.contributor.author | Huang, Hao-Yuan | en_US |
| dc.contributor.author | Chiang, Chen-Kuo | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:06:39Z | |
| dc.date.available | 2014-12-08T15:06:39Z | |
| dc.date.issued | 2010-07-01 | en_US |
| dc.description.abstract | A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency. | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2047232 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2047232 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5199 | |
| dc.identifier.wosnumber | WOS:000281833100016 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Flexible thin-film transistors (TFTs) | en_US |
| dc.subject | HfLaO | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | InGaZnO (IGZO) | en_US |
| dc.title | Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing | en_US |
| dc.type | Article | en_US |