Ion beam studies of InAs/GaAs quantum dots after annealing

Abstract

The microstructure changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence (PL). A small blueshift of the PL emission is observed for annealing temperatures of 650-800 degrees C and an obvious blueshift at 850 degrees C. The yield of channeled spectra decreased as annealing temperature was increased, but the yield increased while temperature above 800 degrees C in RTA. These results imply the strain of QD varied during RTA treatments. In addition, the As/Ga atomic ratio near the surface was determined from the surface peaks of the channeled spectrum. (c) 2008 Elsevier B.V. All rights reserved.