Ion beam studies of InAs/GaAs quantum dots after annealing
| dc.citation.epage | 1237 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1235 | en_US |
| dc.citation.volume | 266 | en_US |
| dc.contributor.author | Niu, H. | en_US |
| dc.contributor.author | Chen, C. H. | en_US |
| dc.contributor.author | Wang, H. Y. | en_US |
| dc.contributor.author | Wu, S. C. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:08Z | |
| dc.date.available | 2014-12-08T15:44:08Z | |
| dc.date.issued | 2008-04-01 | en_US |
| dc.description.abstract | The microstructure changes of self-assembled InAs/GaAs quantum dots during RTA treatment was investigated using ion channeling and photoluminescence (PL). A small blueshift of the PL emission is observed for annealing temperatures of 650-800 degrees C and an obvious blueshift at 850 degrees C. The yield of channeled spectra decreased as annealing temperature was increased, but the yield increased while temperature above 800 degrees C in RTA. These results imply the strain of QD varied during RTA treatments. In addition, the As/Ga atomic ratio near the surface was determined from the surface peaks of the channeled spectrum. (c) 2008 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.nimb.2008.02.040 | en_US |
| dc.identifier.issn | 0168-583X | en_US |
| dc.identifier.journal | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.nimb.2008.02.040 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29798 | |
| dc.identifier.wosnumber | WOS:000256677600020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | quantum dots | en_US |
| dc.subject | GaAs | en_US |
| dc.subject | InAs | en_US |
| dc.subject | ion-channeling | en_US |
| dc.title | Ion beam studies of InAs/GaAs quantum dots after annealing | en_US |
| dc.type | Article; Proceedings Paper | en_US |