Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention
| dc.citation.epage | 383 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 381 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Tsai, C. Y. | en_US |
| dc.contributor.author | Lee, T. H. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電機工程學系 | zh_TW |
| dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:03Z | |
| dc.date.available | 2014-12-08T15:12:03Z | |
| dc.date.issued | 2011-03-01 | en_US |
| dc.description.abstract | We have fabricated the TaN-[SiO(2)-LaAlO(3)]-HfON-[LaAlO(3)-SiO(2)]-Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 degrees C, and a 5.5-V endurance window at 10(6) cycles were measured under very fast 100-mu s and low +/- 16-V program/erase. These excellent results were achieved using an As(+) implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation. | en_US |
| dc.identifier.doi | 10.1109/LED.2010.2100019 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2010.2100019 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9240 | |
| dc.identifier.wosnumber | WOS:000287658400053 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Charge-trapping Flash (CTF) | en_US |
| dc.subject | HfON | en_US |
| dc.subject | ion implant | en_US |
| dc.subject | nonvolatile memory (NVM) | en_US |
| dc.title | Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention | en_US |
| dc.type | Article | en_US |