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Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-mu m High-Voltage CMOS Process

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dc.citation.epage837en_US
dc.citation.spage833en_US
dc.citation.volume36en_US
dc.contributor.authorWu, Dai-Rongen_US
dc.contributor.authorTsai, Chia-Mingen_US
dc.contributor.authorHuang, Yi-Hsiangen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2018-08-21T05:53:19Z
dc.date.available2018-08-21T05:53:19Z
dc.date.issued2018-02-01en_US
dc.description.abstractCrosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, and bias voltage on crosstalk has been experimentally studied. Our work reveals that direct-path optical crosstalk dominates in these CMOS SPADs, which is also confirmed with the first time-correlated crosstalk measurement. This work is valuable for SPAD array design and optimization in CMOS technology.en_US
dc.identifier.doi10.1109/JLT.2017.2779490en_US
dc.identifier.issn0733-8724en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2017.2779490en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/144534
dc.identifier.wosnumberWOS:000425207100025en_US
dc.language.isoen_USen_US
dc.subjectBreakdown flashen_US
dc.subjectCMOS technologyen_US
dc.subjectcrosstalken_US
dc.subjectsingle-photon avalanche diodesen_US
dc.titleCrosstalk Between Single-Photon Avalanche Diodes in a 0.18-mu m High-Voltage CMOS Processen_US
dc.typeArticleen_US

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