Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
| dc.citation.epage | 218 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 216 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Huang, Po-Chun | en_US |
| dc.contributor.author | Chen, Lu-An | en_US |
| dc.contributor.author | Sheu, Jeng-Tzong | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:20Z | |
| dc.date.available | 2014-12-08T15:07:20Z | |
| dc.date.issued | 2010-03-01 | en_US |
| dc.description.abstract | A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2038177 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2038177 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5777 | |
| dc.identifier.wosnumber | WOS:000274995300013 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Field enhancement | en_US |
| dc.subject | gate-all-around (GAA) | en_US |
| dc.subject | gate injection | en_US |
| dc.subject | nanowire (NW) | en_US |
| dc.subject | SONOS | en_US |
| dc.subject | thin-film transistor (TFT) | en_US |
| dc.title | Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory | en_US |
| dc.type | Article | en_US |