Visualization of vortex flow patterns with a uniformly perforated showerhead in a model lamp heat, single-wafer thermal processor

Abstract

Following the rapid progress in the growth of semiconductor thin crystal films, rapid thermal (RT) CVD not only allows for minimization of processing and cycle time, but also enables a significant reduction in the thermal budget. The flow recirculation in the processing chamber driven by the large buoyancy resulting from the temperature differences between the wafer and input gases is known to produce detrimental effects on the film properties. In this study, the proposed 8" rapid thermal processor (RTP) with a showerhead inlet contains three basic types of flow patterns (plug, mixed, and buoyancy-induced flow). The physical parameters, gas flow rate, and pressure of processing chamber are investigated in detail.