The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing
| dc.citation.epage | 528 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 526 | en_US |
| dc.citation.volume | 18 | en_US |
| dc.contributor.author | Kao, CH | en_US |
| dc.contributor.author | Lai, CS | en_US |
| dc.contributor.author | Lee, CL | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:22Z | |
| dc.date.available | 2014-12-08T15:01:22Z | |
| dc.date.issued | 1997-11-01 | en_US |
| dc.description.abstract | A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm(2)). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA. | en_US |
| dc.identifier.doi | 10.1109/55.641434 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.641434 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/229 | |
| dc.language.iso | en_US | en_US |
| dc.title | The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing | en_US |
| dc.type | Article | en_US |