Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Abstract

Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 mu m are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (TO) values of 155 K in a temperature range of 25-95 degrees C and 179 K in a temperature range of 25-85 degrees C are obtained from a 4 x 1000 mu m(2) ridge waveguide uncoated laser diode. The To value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 degrees C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.