Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
| dc.citation.epage | 83 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 81 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 66 | |
| dc.contributor.author | Zhu, SY | en_US |
| dc.contributor.author | Li, R | en_US |
| dc.contributor.author | Lee, SJ | en_US |
| dc.contributor.author | Li, MF | en_US |
| dc.contributor.author | Du, AY | en_US |
| dc.contributor.author | Singh, J | en_US |
| dc.contributor.author | Zhu, CX | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Kwong, DL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:34:48Z | |
| dc.date.available | 2014-12-08T15:34:48Z | |
| dc.date.issued | 2005-02-01 | en_US |
| dc.description.abstract | Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si. | en_US |
| dc.identifier.doi | 10.1109/LED.2004.841462 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2004.841462 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/23688 | |
| dc.identifier.wosnumber | WOS:000226479100011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | germanium | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | metal gate | en_US |
| dc.subject | MOSFET | en_US |
| dc.subject | Schottky | en_US |
| dc.title | Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate | en_US |
| dc.type | Article | en_US |