Behaviors of negative resistances and its influences on VCO design
| dc.citation.epage | 248 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 243 | en_US |
| dc.citation.volume | E84C | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Kao, YH | en_US |
| dc.contributor.author | Wu, TH | en_US |
| dc.contributor.department | 傳播研究所 | zh_TW |
| dc.contributor.department | Institute of Communication Studies | en_US |
| dc.date.accessioned | 2014-12-08T15:44:16Z | |
| dc.date.available | 2014-12-08T15:44:16Z | |
| dc.date.issued | 2001-02-01 | en_US |
| dc.description.abstract | The features of the negative resistance in common source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three-capacitor model. A design procedure is then developed. The results are applied to a design of wide band oscillator at the several gigahertz region. | en_US |
| dc.identifier.issn | 0916-8524 | en_US |
| dc.identifier.journal | IEICE TRANSACTIONS ON ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29888 | |
| dc.identifier.wosnumber | WOS:000166825700015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | oscillator | en_US |
| dc.subject | VCO | en_US |
| dc.subject | wideband | en_US |
| dc.subject | negative resistance | en_US |
| dc.title | Behaviors of negative resistances and its influences on VCO design | en_US |
| dc.type | Article | en_US |
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