Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method
| dc.citation.epage | en_US | |
| dc.citation.issue | 1 | en_US |
| dc.citation.volume | 90 | en_US |
| dc.citation.woscount | 104 | |
| dc.contributor.author | Cheng, Hua-Chi | en_US |
| dc.contributor.author | Chen, Chia-Fu | en_US |
| dc.contributor.author | Tsay, Chien-Yie | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:14:57Z | |
| dc.date.available | 2014-12-08T15:14:57Z | |
| dc.date.issued | 2007-01-01 | en_US |
| dc.description.abstract | Top-gate thin film transistors with n-type ZnO active channel were performed under 230 degrees C. Especially, ZnO film was deposited by a combined method of sol-gel and chemical bath deposition without any preactivation for film growth. Silicon nitride and indium tin oxide were used as the gate insulator and the conducting electrodes (source, drain, and gate). These transistors were highly transparent in the visible spectrum, with transmittance as high as 75% to approximately 85% at wavelength from 500 to 700 nm. The optimum device has field-effect mobility of 0.67 cm(2)/V s and an on-off ratio more than 10(7). | en_US |
| dc.identifier.doi | 10.1063/1.2404590 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2404590 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11243 | |
| dc.identifier.wosnumber | WOS:000243379900049 | |
| dc.language.iso | en_US | en_US |
| dc.title | Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method | en_US |
| dc.type | Article | en_US |