CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
| dc.citation.epage | 1316 | en_US |
| dc.citation.spage | 1314 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 9 | en_US |
| dc.contributor.author | TAI, K | en_US |
| dc.contributor.author | HUANG, KF | en_US |
| dc.contributor.author | WU, CC | en_US |
| dc.contributor.author | WYNN, JD | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Institute of EO Enginerring | en_US |
| dc.date.accessioned | 2019-04-02T05:59:15Z | |
| dc.date.available | 2019-04-02T05:59:15Z | |
| dc.date.issued | 1993-07-22 | en_US |
| dc.description.abstract | Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C. | en_US |
| dc.identifier.doi | 10.1049/el:19930881 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:19930881 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149111 | |
| dc.identifier.wosnumber | WOS:A1993LX00200002 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | CHEMICAL VAPOR DEPOSITION | en_US |
| dc.subject | SEMICONDUCTOR LASERS | en_US |
| dc.title | CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES | en_US |
| dc.type | Article | en_US |
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