Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures
| dc.citation.epage | 1231 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1229 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lin, Yueh Chin | en_US |
| dc.contributor.author | Trinh, Hai Dang | en_US |
| dc.contributor.author | Chuang, Ting Wei | en_US |
| dc.contributor.author | Iwai, Hiroshi | en_US |
| dc.contributor.author | Kakushima, Kuniyuki | en_US |
| dc.contributor.author | Ahmet, Parhat | en_US |
| dc.contributor.author | Lin, Chun Hsiung | en_US |
| dc.contributor.author | Diaz, Carlos H. | en_US |
| dc.contributor.author | Chang, Hui Chen | en_US |
| dc.contributor.author | Jang, Simon M. | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:15Z | |
| dc.date.available | 2014-12-08T15:32:15Z | |
| dc.date.issued | 2013-10-01 | en_US |
| dc.description.abstract | In this letter, a high-k composite oxide composed of La2O3 and HfO2 is investigated for n-In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3 (0.8 nm)/HfO2(0.8 nm) on InGaAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2272083 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2272083 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22686 | |
| dc.identifier.wosnumber | WOS:000325186600008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | HfO2 | en_US |
| dc.subject | InGaAs | en_US |
| dc.subject | La2O3 | en_US |
| dc.subject | metal-oxide-semiconductor (MOS) | en_US |
| dc.subject | molecular beam deposition (MBD) | en_US |
| dc.subject | post deposition annealing (PDA) | en_US |
| dc.title | Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing Temperatures | en_US |
| dc.type | Article | en_US |