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The determination of S-parameters from the poles of voltage-gain transfer function for RF IC design

dc.citation.epage199en_US
dc.citation.issue1en_US
dc.citation.spage191en_US
dc.citation.volume52en_US
dc.citation.woscount4
dc.contributor.authorLu, SSen_US
dc.contributor.authorLin, YSen_US
dc.contributor.authorChiu, HWen_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorMeng, CCen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:36:12Z
dc.date.available2014-12-08T15:36:12Z
dc.date.issued2005-01-01en_US
dc.description.abstractA method for estimating the S-parameters of active circuits using hand analysis is introduced. This method involves the determination of S-parameters from the poles of voltage-gain transfer function. It is found that the information on the frequency responses of input/output return loss, input/output impedance, and reverse isolation is all hidden in the poles or equivalently in the denominator of the voltage-gain transfer function of a circuit system. The method has been applied to three commonly used RF circuit configurations and one fabricated CMOS wide-band amplifier to illustrate the usefulness of the proposed theory.en_US
dc.identifier.doi10.1109/TCSI.2004.840084en_US
dc.identifier.issn1057-7122en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2004.840084en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24547
dc.identifier.wosnumberWOS:000226247800018
dc.language.isoen_USen_US
dc.subjectbroad-band amplifieren_US
dc.subjectpolesen_US
dc.subjectS-parametersen_US
dc.subjecttransfer functionen_US
dc.titleThe determination of S-parameters from the poles of voltage-gain transfer function for RF IC designen_US
dc.typeArticleen_US

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