The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes
| dc.citation.epage | 66 | en_US |
| dc.citation.spage | 65 | en_US |
| dc.contributor.author | Kao, Chih-Chiang | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Kao, Tsung-Ting | en_US |
| dc.contributor.author | Lin, Li-Fan | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:14:02Z | |
| dc.date.available | 2014-12-08T15:14:02Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0,52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm. (C)2007 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-4244-3590-6 | en_US |
| dc.identifier.journal | 2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10800 | |
| dc.identifier.wosnumber | WOS:000268751000033 | |
| dc.language.iso | en_US | en_US |
| dc.title | The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes | en_US |
| dc.type | Proceedings Paper | en_US |
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