The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes
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We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0,52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm. (C)2007 Optical Society of America