The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes

標題:	The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes
作者:	Kao, Chih-Chiang Lu, Tien-Chang Kao, Tsung-Ting Lin, Li-Fan Kuo, Hao-Chung Wang, Shing-Chung 光電工程學系 Department of Photonics
公開日期:	2007
摘要:	We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0,52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm. (C)2007 Optical Society of America
URI:	http://hdl.handle.net/11536/10800
ISBN:	978-1-4244-3590-6
期刊:	2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5
起始頁:	65
結束頁:	66
顯示於類別：	會議論文