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Novel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition method

dc.citation.epage303en_US
dc.citation.spage294en_US
dc.citation.volume2639en_US
dc.contributor.authorYeh, CFen_US
dc.contributor.authorLin, SSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:43Z
dc.date.available2014-12-08T15:27:43Z
dc.date.issued1995en_US
dc.identifier.doi10.1117/12.221287en_US
dc.identifier.isbn0-8194-2005-0en_US
dc.identifier.journalMICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.221287en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/19970
dc.identifier.wosnumberWOS:A1995BE29X00033
dc.language.isoen_USen_US
dc.subjectlow-stressen_US
dc.subjectliquid phase depositionen_US
dc.subjectSiO2-F-x(x)en_US
dc.titleNovel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition methoden_US
dc.typeProceedings Paperen_US

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