HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES
| dc.citation.epage | 455 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 453 | en_US |
| dc.citation.volume | 14 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | SHIN, NF | en_US |
| dc.contributor.author | CHEN, JY | en_US |
| dc.contributor.author | JEN, TS | en_US |
| dc.contributor.author | HONG, JW | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:22Z | |
| dc.date.available | 2014-12-08T15:04:22Z | |
| dc.date.issued | 1993-09-01 | en_US |
| dc.description.abstract | Hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's) with graded p+-i and i-n+ junctions have been proposed and fabricated successfully on an indium-tin-oxide (ITO)-coated glass. An obtained orange TFLED reveals a brightness of 207 cd/m2 at an injection current density of 600 mA/cm2, which is the brightest one ever reported for a-SiC:H TFLED's at the same injection current density. This significant increase of brightness could be ascribed to the combined effect of reduced interface states by using the graded-gap junctions, lower contact resistance due to post-metallization annealing, and higher optical gaps of the doped layers. | en_US |
| dc.identifier.doi | 10.1109/55.244709 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.244709 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2877 | |
| dc.identifier.wosnumber | WOS:A1993LU16600010 | |
| dc.language.iso | en_US | en_US |
| dc.title | HYDROGENATED AMORPHOUS-SILICON CARBIDE DOUBLE GRADED-GAP P-I-N THIN-FILM LIGHT-EMITTING-DIODES | en_US |
| dc.type | Article | en_US |