Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films

dc.citation.epage	11560	en_US
dc.citation.issue	16	en_US
dc.citation.spage	11555	en_US
dc.citation.volume	54	en_US
dc.contributor.author	Tsai, CT	en_US
dc.contributor.author	Chen, SH	en_US
dc.contributor.author	Chuu, DS	en_US
dc.contributor.author	Chou, WC	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2014-12-08T15:02:17Z
dc.date.available	2014-12-08T15:02:17Z
dc.date.issued	1996-10-15	en_US
dc.description.abstract	Highly oriented Cd1-xMnxS thin films with a wurtzite structure were grown by the radio-frequency sputtering technique. The grain size of the Cd1-xMnxS thin films was found to decrease with an increase in the Mn concentration x. Moreover, the lattice softening effect due to the quantum size effect, the band-bowing phenomena accounted for by the band-gap correction arising from the chemical disorder, and the exchange interaction between the band carrier and the d electron of the magnetic Mn ions have been investigated.	en_US
dc.identifier.issn	0163-1829	en_US
dc.identifier.journal	PHYSICAL REVIEW B	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/976
dc.language.iso	en_US	en_US
dc.title	Fabrication and physical properties of radio frequency sputtered Cd1-xMnxS thin films	en_US
dc.type	Article	en_US

Files

Now showing 1 - 1 of 1