High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
| dc.citation.epage | 584 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 582 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 21 | |
| dc.contributor.author | Su, CJ | en_US |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:16:17Z | |
| dc.date.available | 2014-12-08T15:16:17Z | |
| dc.date.issued | 2006-07-01 | en_US |
| dc.description.abstract | Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility. | en_US |
| dc.identifier.doi | 10.1109/LED.2006.877708 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2006.877708 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12075 | |
| dc.identifier.wosnumber | WOS:000238712200018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | metal-induced lateral crystallization (MILC) | en_US |
| dc.subject | nanowires (NWs) | en_US |
| dc.subject | thin-film transistors (TFTs) | en_US |
| dc.title | High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization | en_US |
| dc.type | Article | en_US |