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Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

dc.citation.epageen_US
dc.citation.issue17en_US
dc.citation.volume104en_US
dc.citation.woscount0
dc.contributor.authorLee, Chao-Kueien_US
dc.contributor.authorLin, Yuan-Yaoen_US
dc.contributor.authorLin, Sung-Huien_US
dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:36:08Z
dc.date.available2014-12-08T15:36:08Z
dc.date.issued2014-04-28en_US
dc.description.abstractChirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations. (C) 2014 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4875027en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4875027en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/24472
dc.identifier.wosnumberWOS:000336142500037
dc.language.isoen_USen_US
dc.titleChirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAsen_US
dc.typeArticleen_US

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