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Photonic-crystal light-emitting diodes on p-type GaAs substrates for optical communications

dc.citation.epage1517en_US
dc.citation.issue9en_US
dc.citation.spage1509en_US
dc.citation.volume55en_US
dc.citation.woscount2
dc.contributor.authorYang, Hung-Pin D.en_US
dc.contributor.authorLiu, Jui-Nungen_US
dc.contributor.authorLai, Fang-I.en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChi, Jim Y.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:44Z
dc.date.available2014-12-08T15:12:44Z
dc.date.issued2008en_US
dc.description.abstractOxide-confined photonic-crystal (PhC) light-emitting diodes (LEDs) on p-type GaAs substrate in the 830 nm range are reported. The device consists of a bottom distributed Bragg reflector (DBR), quantum wells (QWs), and a top DBR, with a photonic-crystal structure formed within the n-type ohmic contact ring for light extraction. The etching depth of the PhC holes is 17-pair out of the 22-pair top DBR being etched off. The internally reflected spontaneous light emission can be extracted out of PhC holes because of lower reflectance within those areas. High-resolution micrographic imaging studies indicate that the device emits light mainly through the photonic-crystal holes and it is suitable for optical communications.en_US
dc.identifier.doi10.1080/09500340701691608en_US
dc.identifier.issn0950-0340en_US
dc.identifier.journalJOURNAL OF MODERN OPTICSen_US
dc.identifier.urihttp://dx.doi.org/10.1080/09500340701691608en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9809
dc.identifier.wosnumberWOS:000256764200012
dc.language.isoen_USen_US
dc.subjectlight-emitting diodesen_US
dc.subjectp-substrateen_US
dc.subjectphotonic-crystalen_US
dc.titlePhotonic-crystal light-emitting diodes on p-type GaAs substrates for optical communicationsen_US
dc.typeArticleen_US

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