Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 98 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Hsu, K. S. | en_US |
| dc.contributor.author | Chiu, T. T. | en_US |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Chen, K. L. | en_US |
| dc.contributor.author | Shih, M. H. | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Chang, Yia-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:36Z | |
| dc.date.available | 2014-12-08T15:37:36Z | |
| dc.date.issued | 2011-01-31 | en_US |
| dc.description.abstract | Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 mu m was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was achieved for this microdisk. A high threshold characteristic temperature of 77 K was also observed. It is found that the lasing wavelength matches closely with the first-order whispering-gallery mode of the cavity as obtained from the finite-element method simulation. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3543839] | en_US |
| dc.identifier.doi | 10.1063/1.3543839 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3543839 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25859 | |
| dc.identifier.wosnumber | WOS:000286988400005 | |
| dc.language.iso | en_US | en_US |
| dc.title | Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots | en_US |
| dc.type | Article | en_US |