CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS
| dc.citation.epage | 2506 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 2505 | en_US |
| dc.citation.volume | 66 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | KAO, MJ | en_US |
| dc.contributor.author | HSU, WC | en_US |
| dc.contributor.author | HSU, RT | en_US |
| dc.contributor.author | WU, YH | en_US |
| dc.contributor.author | LIN, TY | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:23Z | |
| dc.date.available | 2014-12-08T15:03:23Z | |
| dc.date.issued | 1995-05-08 | en_US |
| dc.identifier.doi | 10.1063/1.113148 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.113148 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1923 | |
| dc.identifier.wosnumber | WOS:A1995QX02600019 | |
| dc.language.iso | en_US | en_US |
| dc.title | CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORS | en_US |
| dc.type | Article | en_US |
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