Intense terahertz emission from a-plane InN surface
| dc.citation.epage | en_US | |
| dc.citation.issue | 10 | en_US |
| dc.citation.volume | 92 | en_US |
| dc.citation.woscount | 32 | |
| dc.contributor.author | Ahn, H. | en_US |
| dc.contributor.author | Ku, Y. -P. | en_US |
| dc.contributor.author | Chuang, C. -H. | en_US |
| dc.contributor.author | Pan, C. -L. | en_US |
| dc.contributor.author | Lin, H. -W. | en_US |
| dc.contributor.author | Hong, Y. -L. | en_US |
| dc.contributor.author | Gwo, S. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:28Z | |
| dc.date.available | 2014-12-08T15:12:28Z | |
| dc.date.issued | 2008-03-10 | en_US |
| dc.description.abstract | We report a significant enhancement in terahertz emission from the indium nitride (InN) films grown along the a axis (a-plane InN), relative to the InN films grown along the c axis. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a axis, which effectively enhances the geometrical coupling of the radiation out of semiconductor. In addition, azimuthal angle dependence measurement shows that the p-polarized terahertz output consists of a large angularly independent component and a weak component with a distinctive fourfold rotation symmetry. (c) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2892655 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2892655 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9580 | |
| dc.identifier.wosnumber | WOS:000253989300065 | |
| dc.language.iso | en_US | en_US |
| dc.title | Intense terahertz emission from a-plane InN surface | en_US |
| dc.type | Article | en_US |