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HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURES

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dc.citation.epageL3en_US
dc.citation.issue1Aen_US
dc.citation.spageL1en_US
dc.citation.volume34en_US
dc.citation.woscount6
dc.contributor.authorKAO, MJen_US
dc.contributor.authorHSU, WCen_US
dc.contributor.authorSHIEH, HMen_US
dc.contributor.authorLIU, WCen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:03:35Z
dc.date.available2014-12-08T15:03:35Z
dc.date.issued1995-01-01en_US
dc.description.abstractDouble-quantum-well GaAs/InGaAs/GaAs pseudomorphic heterostructures by delta-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10(13) cm-2 along with an enhanced mobility of 2100 cm2/V.s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.en_US
dc.identifier.doi10.1143/JJAP.34.L1en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.L1en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2126
dc.identifier.wosnumberWOS:A1995QC36800001
dc.language.isoen_USen_US
dc.subjectDELTA-DOPINGen_US
dc.subjectHFETen_US
dc.subjectDDCFETen_US
dc.subjectMOCVDen_US
dc.subjectINGAAS/GAAS QWen_US
dc.subjectHIGH CARRIER DENSITYen_US
dc.subjectHIGH MOBILITYen_US
dc.titleHIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURESen_US
dc.typeArticleen_US

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