A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE
| dc.citation.epage | 2347 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 2342 | en_US |
| dc.citation.volume | 135 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | LIN, MZ | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:57Z | |
| dc.date.available | 2014-12-08T15:05:57Z | |
| dc.date.issued | 1988-09-01 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4491 | |
| dc.identifier.wosnumber | WOS:A1988P984700042 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE | en_US |
| dc.type | Article | en_US |