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Influence of structural anisotropy to anisotropic electron mobility in a-plane InN

dc.citation.epageen_US
dc.citation.issue6en_US
dc.citation.volume102en_US
dc.citation.woscount0
dc.contributor.authorAhn, H.en_US
dc.contributor.authorChia, J. -W.en_US
dc.contributor.authorLee, H. -M.en_US
dc.contributor.authorGwo, S.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:29:30Z
dc.date.available2014-12-08T15:29:30Z
dc.date.issued2013-02-11en_US
dc.description.abstractThis study reports on the anisotropic electron transport properties and a correlation between the electron mobility (mu) and the stacking faults (SFs) in the a-plane InN film. Electron mobilities measured by terahertz time-domain spectroscopy and Hall effect measurement along the in-plane [(1) over bar 100] (c(perpendicular to)) orientation were much higher than those of the in-plane [0001] (c(parallel to)) orientation. This result shows a sharp contrast to higher defect density for the c(perpendicular to) orientation as measured by x-ray diffraction. The electrons transporting through the planar SFs aligned along the c(perpendicular to) direction are expected to experience more scattering by defects, resulting in lower mu for the c(parallel to) orientation. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792209]en_US
dc.identifier.doi10.1063/1.4792209en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4792209en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21218
dc.identifier.wosnumberWOS:000315053300023
dc.language.isoen_USen_US
dc.titleInfluence of structural anisotropy to anisotropic electron mobility in a-plane InNen_US
dc.typeArticleen_US

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