Improvement of polysilicon oxide integrity using NF3-annealing
| dc.citation.epage | L563 | en_US |
| dc.citation.issue | 6B | en_US |
| dc.citation.spage | L562 | en_US |
| dc.citation.volume | 39 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Yang, WL | en_US |
| dc.contributor.author | Shieh, MS | en_US |
| dc.contributor.author | Chen, YM | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Liu, DG | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:12Z | |
| dc.date.available | 2014-12-08T15:45:12Z | |
| dc.date.issued | 2000-06-15 | en_US |
| dc.description.abstract | We report a method to improve the polysilicon oxide integrity by using NF3-annealing. Incorporating with stronger Si-N and Si-F bonds at the polysilicon/polyoxide interface, significant improvements are found in terms of roughness, breakdown strength, charge-to-breakdown, and stress-induced-leakage-current. | en_US |
| dc.identifier.doi | 10.1143/JJAP.39.L562 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.39.L562 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30461 | |
| dc.identifier.wosnumber | WOS:000088393100003 | |
| dc.language.iso | en_US | en_US |
| dc.subject | polyoxide | en_US |
| dc.subject | NF3-annealing | en_US |
| dc.subject | nitrogen | en_US |
| dc.subject | fluorine | en_US |
| dc.subject | SILC | en_US |
| dc.title | Improvement of polysilicon oxide integrity using NF3-annealing | en_US |
| dc.type | Article | en_US |