PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST

dc.citation.epage	108	en_US
dc.citation.issue	2	en_US
dc.citation.spage	101	en_US
dc.citation.volume	14	en_US
dc.citation.woscount	0
dc.contributor.author	LOONG, WA	en_US
dc.contributor.author	CHANG, HW	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.date.accessioned	2014-12-08T15:05:16Z
dc.date.available	2014-12-08T15:05:16Z
dc.date.issued	1991-05-01	en_US
dc.description.abstract	Poly(butene-1 sulfone) (PBS), a sensitive e-beam and X-ray resist, is inert to UV light. We found that the addition of a small amount of photoacid, triphenylsulfonium hexafluoroarsenate (TPSHFA), to PBS can catalyze its main chain scission via C-S bond cleavage by 254 nm deep UV exposure and concurrent baking at 80-degrees-C. Therefore, PBS can be used as a deep UV positive resist. The chemistry and resist characteristics of the PBS + TPSHFA system are discussed.	en_US
dc.identifier.issn	0167-9317	en_US
dc.identifier.journal	MICROELECTRONIC ENGINEERING	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/3803
dc.identifier.wosnumber	WOS:A1991FX01300003
dc.language.iso	en_US	en_US
dc.subject	POLY(BUTENE-1 SULFONE)	en_US
dc.subject	TRIPHENYLSULFONIUM HEXAFLUOROARSENATE	en_US
dc.subject	POSITIVE RESIST	en_US
dc.title	PHOTOACID CATALYZED MAIN CHAIN SCISSION OF POLY(BUTENE-1 SULFONE) AS A DEEP UV POSITIVE RESIST	en_US
dc.type	Article	en_US

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