Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD
| dc.citation.epage | 40 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 38 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Wang, Jui-Hao | en_US |
| dc.contributor.author | Lien, Shui-Yang | en_US |
| dc.contributor.author | Chen, Chia-Fu | en_US |
| dc.contributor.author | Whang, Wha-Tzong | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:07:46Z | |
| dc.date.available | 2014-12-08T15:07:46Z | |
| dc.date.issued | 2010-01-01 | en_US |
| dc.description.abstract | Large-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 mu m and an intrinsic layer were grown without incubation. These techniques were employed to prepare large-grain poly-Si thin-film solar cells. An ITO/n-i-p (HWCVD)/p+ (AIC)/Ti/glass-structured poly-Si thin-film solar cell with an initial efficiency of 5.6% was obtained. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2035141 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2035141 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6108 | |
| dc.identifier.wosnumber | WOS:000273090800014 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Aluminum-induced crystallization (AIC) | en_US |
| dc.subject | hot-wire chemical vapor deposition (HWCVD) | en_US |
| dc.subject | polycrystalline silicon (poly-Si) | en_US |
| dc.title | Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD | en_US |
| dc.type | Article | en_US |