Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
| dc.citation.epage | + | en_US |
| dc.citation.spage | 158 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Wang, J. -S. | en_US |
| dc.contributor.author | Chen, William P. N. | en_US |
| dc.contributor.author | Shih, C. -H. | en_US |
| dc.contributor.author | Lien, C. | en_US |
| dc.contributor.author | Su, Pin | en_US |
| dc.contributor.author | Sheu, Y. M. | en_US |
| dc.contributor.author | Chao, Donald Y. -S. | en_US |
| dc.contributor.author | Goto, K. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:49:08Z | |
| dc.date.available | 2017-04-21T06:49:08Z | |
| dc.date.issued | 2007 | en_US |
| dc.identifier.isbn | 978-1-4244-0584-8 | en_US |
| dc.identifier.journal | 2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135150 | |
| dc.identifier.wosnumber | WOS:000247059300072 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs | en_US |
| dc.type | Proceedings Paper | en_US |
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