Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
| dc.citation.epage | en_US | |
| dc.citation.issue | 14 | en_US |
| dc.citation.volume | 95 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tang, Chun-Jung | en_US |
| dc.contributor.author | Wang, Tahui | en_US |
| dc.contributor.author | Chang, Chih-Sheng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:33Z | |
| dc.date.available | 2014-12-08T15:08:33Z | |
| dc.date.issued | 2009-10-05 | en_US |
| dc.description.abstract | Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the hole mobility in a (100)/[110] silicon well decreases with a decreasing well thickness, which is in agreement with the experimental result. The hole mobility in a germanium channel MOSFET, however, exhibits a peak in a sub-20 nm well because of the interplay between intrasubband and intersubband scatterings. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3244205] | en_US |
| dc.identifier.doi | 10.1063/1.3244205 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3244205 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6574 | |
| dc.identifier.wosnumber | WOS:000270670200034 | |
| dc.language.iso | en_US | en_US |
| dc.title | Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors | en_US |
| dc.type | Article | en_US |