Effects of high-resistivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures

Abstract

Deep-level transient spectroscopy and transient capacitance measurements are performed on a molecular-beam-epitaxially grown GaAs n-i-p diode with a 2000-Angstrom-thick low-temperature OLT)-grown layer immersed in its intrinsic region. The transient capacitance measurements reveal that the time constant and activation energy are the same for both the emission and capture processes. An equivalent circuit based on capacitance-frequency spectra is derived and used to obtain the resistivity values of the LT layer that are in agreement with experimental results. It is concluded that the transient capacitance observed corresponds to the resistance-capacitance time constant due to the LT-layer. In addition, the value of the activation energy is explained based on the equivalent circuit.