Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:20Z | |
| dc.date.available | 2014-12-08T15:30:20Z | |
| dc.date.issued | 2013-04-01 | en_US |
| dc.description.abstract | A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 10(6) cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO2, and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.6.041203 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.6.041203 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21697 | |
| dc.identifier.wosnumber | WOS:000317488600005 | |
| dc.language.iso | en_US | en_US |
| dc.title | Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning | en_US |
| dc.type | Article | en_US |