Low-noise single-photon avalanche diodes in 0.25 mu m high-voltage CMOS technology

dc.citation.epage	57	en_US
dc.citation.issue	1	en_US
dc.citation.spage	55	en_US
dc.citation.volume	38	en_US
dc.citation.woscount	4
dc.contributor.author	Hsu, Fang-Ze	en_US
dc.contributor.author	Wu, Jau-Yang	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:28:45Z
dc.date.available	2014-12-08T15:28:45Z
dc.date.issued	2013-01-01	en_US
dc.description.abstract	By using 0.25 mu m high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications. (C) 2012 Optical Society of America	en_US
dc.identifier.doi	10.1364/OL.38.000055	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.38.000055	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/20805
dc.identifier.wosnumber	WOS:000312708200019
dc.language.iso	en_US	en_US
dc.title	Low-noise single-photon avalanche diodes in 0.25 mu m high-voltage CMOS technology	en_US
dc.type	Article	en_US

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