Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003)
| dc.citation.epage | L10 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | L10 | en_US |
| dc.citation.volume | 150 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Tsui, BY | en_US |
| dc.contributor.author | Huang, CF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:01Z | |
| dc.date.available | 2014-12-08T15:41:01Z | |
| dc.date.issued | 2003-05-01 | en_US |
| dc.identifier.doi | 10.1149/1.1566966 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1566966 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27945 | |
| dc.identifier.wosnumber | WOS:000182184200072 | |
| dc.language.iso | en_US | en_US |
| dc.title | Investigation of Cu/TaN metal gate for metal-oxide-silicon devices (vol 150, pg G22, 2003) | en_US |
| dc.type | Correction | en_US |