Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell
| dc.contributor.author | Wang, Hsun-Wen | en_US |
| dc.contributor.author | Yu, Pei-Chen | en_US |
| dc.contributor.author | Han, Hau-Vei | en_US |
| dc.contributor.author | Lin, Chien-Chung | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Lin, Shiuan-Huei | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:21Z | |
| dc.date.available | 2014-12-08T15:29:21Z | |
| dc.date.issued | 2012 | en_US |
| dc.description.abstract | The characteristics of non-polar double heterojunction GaN/InxGa1-xN solar cells with various indium contents are numerically investigated. By smoothing the interface band edge offset with graded junction, the maximum efficiency reached 24.32 % as In0.6Ga0.4N. (C) 2012 Optical Society of America | en_US |
| dc.identifier.isbn | 978-1-55752-933-6 | en_US |
| dc.identifier.journal | 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21139 | |
| dc.identifier.wosnumber | WOS:000310362401459 | |
| dc.language.iso | en_US | en_US |
| dc.title | Simulation of Grading Double Hetero-junction non-polar InGaN Solar cell | en_US |
| dc.type | Proceedings Paper | en_US |
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