Mg-induced terahertz transparency of indium nitride films
| dc.citation.epage | en_US | |
| dc.citation.issue | 23 | en_US |
| dc.citation.volume | 99 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Ahn, H. | en_US |
| dc.contributor.author | Chia, J. -W. | en_US |
| dc.contributor.author | Lee, H. -M. | en_US |
| dc.contributor.author | Hong, Y. -L. | en_US |
| dc.contributor.author | Gwo, S. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:37Z | |
| dc.date.available | 2014-12-08T15:21:37Z | |
| dc.date.issued | 2011-12-05 | en_US |
| dc.description.abstract | Terahertz time-domain spectroscopy (THz-TDS) has been used to investigate electrical properties of Mg-doped indium nitride (InN). Mg-doping in InN was found to significantly increase terahertz transmittance. THz-TDS analysis based on the Drude model shows that this high transmittance from Mg-doped InN is mainly due to the reduction in mobility associated with ionized dopants. The Hall-effect-measured mobility is typically lower than the THz-TDS-measured mobility for the same samples. However, the results of both measurements have the same slope in the linear relation between mobility and density. By introducing a compensation ratio of similar to 0.2, an excellent agreement in mobilities of two methods is obtained. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669538] | en_US |
| dc.identifier.doi | 10.1063/1.3669538 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3669538 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15362 | |
| dc.identifier.wosnumber | WOS:000298006100045 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mg-induced terahertz transparency of indium nitride films | en_US |
| dc.type | Article | en_US |