A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
| dc.citation.epage | 791 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 782 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.contributor.author | Li, HH | en_US |
| dc.contributor.author | Chu, YL | en_US |
| dc.contributor.author | Wu, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:01:47Z | |
| dc.date.available | 2014-12-08T15:01:47Z | |
| dc.date.issued | 1997-05-01 | en_US |
| dc.description.abstract | A novel charge-pumping method using de source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities, The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions, The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetime. | en_US |
| dc.identifier.doi | 10.1109/16.568040 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.568040 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/550 | |
| dc.language.iso | en_US | en_US |
| dc.title | A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices | en_US |
| dc.type | Article | en_US |