ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS
| dc.citation.epage | 2438 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 2436 | en_US |
| dc.citation.volume | 64 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | TSAI, KL | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.author | CHANG, KH | en_US |
| dc.contributor.author | LIU, DC | en_US |
| dc.contributor.author | CHEN, HR | en_US |
| dc.contributor.author | TSANG, JS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:59Z | |
| dc.date.available | 2014-12-08T15:03:59Z | |
| dc.date.issued | 1994-05-02 | en_US |
| dc.description.abstract | Asymmetric dark current versus voltage characteristics in quantum weil infrared photodetectors have been studied. A model based on asymmetrical potential barriers was proposed. The asymmetrical potential barriers, which are most likely due to the accumulation of oxygen impurities at one of the interfaces, cause the asymmetrical I-V characteristics. The height of the potential spike is found to increase with the Al content in the AlGaAs barriers. Calculations based on our model agree well with experimental results. | en_US |
| dc.identifier.doi | 10.1063/1.111591 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.111591 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2495 | |
| dc.identifier.wosnumber | WOS:A1994NK02600037 | |
| dc.language.iso | en_US | en_US |
| dc.title | ASYMMETRIC DARK CURRENT IN QUANTUM-WELL INFRARED PHOTODETECTORS | en_US |
| dc.type | Article | en_US |
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