Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodes
| dc.citation.epage | L17 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | L15 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, HC | en_US |
| dc.contributor.author | Lee, CS | en_US |
| dc.contributor.author | Chen, SH | en_US |
| dc.contributor.author | Chang, EY | en_US |
| dc.contributor.author | He, J | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:38:51Z | |
| dc.date.available | 2014-12-08T15:38:51Z | |
| dc.date.issued | 2004-07-01 | en_US |
| dc.description.abstract | Schottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400degreesC; the Ti/Co/Cu Schottky structure is thermally stable up to 300degreesC. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices. | en_US |
| dc.identifier.doi | 10.1007/s11664-004-0251-2 | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-004-0251-2 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26608 | |
| dc.identifier.wosnumber | WOS:000222735000014 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Schottky | en_US |
| dc.subject | diffusion barrier | en_US |
| dc.subject | GaAs | en_US |
| dc.title | Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodes | en_US |
| dc.type | Letter | en_US |