A-68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Range
| dc.citation.epage | 1559 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1556 | en_US |
| dc.citation.volume | E93A | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lo, Tien-Yu | en_US |
| dc.contributor.author | Hung, Chung-Chih | en_US |
| dc.contributor.author | Lo, Chi-Hsiang | en_US |
| dc.contributor.department | 電機工程學系 | zh_TW |
| dc.contributor.department | Department of Electrical and Computer Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:48:36Z | |
| dc.date.available | 2014-12-08T15:48:36Z | |
| dc.date.issued | 2010-08-01 | en_US |
| dc.description.abstract | A CMOS transconductor for multi-mode application is presented. The transconductor includes a voltage-to-current converter and a current multiplier. Voltage-to-current conversion employs linear region MOS transistors, and the conversion features high linearity over a wide input swing range. The current multiplier, which operates in the weak inversion region, provides a wide transconductance tuning range without degrading the linearity. The transconductor was designed and fabricated in the TSMC 0.18-mu m CMOS process. The results show the transconductance tuning ratio of 23 and the IM3 performance of -68.5 dB. | en_US |
| dc.identifier.doi | 10.1587/transfun.E93.A.1556 | en_US |
| dc.identifier.issn | 0916-8508 | en_US |
| dc.identifier.journal | IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1587/transfun.E93.A.1556 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32319 | |
| dc.identifier.wosnumber | WOS:000281343100020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | transconductor | en_US |
| dc.subject | IM3 | en_US |
| dc.subject | CMFF | en_US |
| dc.subject | tuning | en_US |
| dc.title | A-68.5 dB IM3 Low-Voltage CMOS Transconductor with Wide Tuning Range | en_US |
| dc.type | Article | en_US |