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Effect of electron-phonon scattering on shot noise in nanoscale junctions

dc.citation.epage0en_US
dc.citation.issue16en_US
dc.citation.spage0en_US
dc.citation.volume95en_US
dc.citation.woscount47en_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorDi Ventra, Men_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2019-04-03T06:42:53Z
dc.date.available2019-04-03T06:42:53Z
dc.date.issued2005-10-14en_US
dc.description.abstractWe investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasiballistic transport. We predict that when the local thermal energy of the junction is larger than its lowest vibrational mode energy eV(c), the inelastic contribution to shot noise ( conductance) increases ( decreases) with bias as V(root V) The corresponding Fano factor thus increases as root V. We also show that the inelastic contribution to the Fano factor saturates with increasing thermal current exchanged between the junction and the bulk electrodes to a value which, for V >> V-c, is independent of bias. These predictions can be readily tested experimentally.en_US
dc.identifier.doi10.1103/PhysRevLett.95.166802en_US
dc.identifier.issn0031-9007en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.95.166802en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/13165
dc.identifier.wosnumberWOS:000232558400060en_US
dc.language.isoen_USen_US
dc.titleEffect of electron-phonon scattering on shot noise in nanoscale junctionsen_US
dc.typeArticleen_US

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